article
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
Japanese Journal of Applied Physics · 1992 · Vol. 31(11R) · pp. 3518–3518
Makoto Tanaka✉(Sanyo (Japan))Mikio Taguchi(Sanyo (Japan))Takao Matsuyama(Sanyo (Japan))T. Sawada(Sanyo (Japan))Shinya Tsuda(Sanyo (Japan))Shoichi Nakano(Sanyo (Japan))H. Hanafusa(Sanyo (Japan))Yukinori Kuwano(Sanyo (Japan))
Abstract
A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).
Semiconductor materials and interfacesSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesHeterojunctionOptoelectronicsMaterials scienceSolar cellLayer (electronics)Thin filmSilicon solar cellNanotechnology
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