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Power-Up SRAM State as an Identifying Fingerprint and Source of True Random Numbers

IEEE Transactions on Computers · 2008 · Vol. 58(9) · pp. 1198–1210
Daniel HolcombWayne BurlesonKan Fu

Abstract

Intermittently powered applications create a need for low-cost security and privacy in potentially hostile environments, supported by primitives including identification and random number generation. Our measurements show that power-up of SRAM produces a physical fingerprint. We propose a system of fingerprint extraction and random numbers in SRAM (FERNS) that harvests static identity and randomness from existing volatile CMOS memory without requiring any dedicated circuitry. The identity results from manufacture-time physically random device threshold voltage mismatch, and the random numbers result from runtime physically random noise. We use experimental data from high-performance SRAM chips and the embedded SRAM of the WISP UHF RFID tag to validate the principles behind FERNS. For the SRAM chip, we demonstrate that 8-byte fingerprints can uniquely identify circuits among a population of 5,120 instances and extrapolate that 24-byte fingerprints would uniquely identify all instances ever produced. Using a smaller population, we demonstrate similar identifying ability from the embedded SRAM. In addition to identification, we show that SRAM fingerprints capture noise, enabling true random number generation. We demonstrate that a 512-byte SRAM fingerprint contains sufficient entropy to generate 128-bit true random numbers and that the generated numbers pass the NIST tests for runs, approximate entropy, and block frequency.

Physical Unclonable Functions (PUFs) and Hardware SecurityCryptographic Implementations and SecurityAdvanced Malware Detection TechniquesStatic random-access memoryComputer scienceRandom number generationByteRandomnessNISTEntropy (arrow of time)PopulationFingerprint (computing)Algorithm

Funding

  • National Science Foundation
Citations
808
FWCI
17.71
field-weighted impact
References
48
Percentile
99%
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References
Static-noise margin analysis of MOS SRAM cells
IEEE Journal of Solid-State Circuits · 1987 · 1,415 citations
Thermal Agitation of Electric Charge in Conductors
Physical Review · 1928 · 2,996 citations
Design of an RFID-Based Battery-Free Programmable Sensing Platform
IEEE Transactions on Instrumentation and Measurement · 2008 · 886 citations
The impact of intrinsic device fluctuations on CMOS SRAM cell stability
IEEE Journal of Solid-State Circuits · 2001 · 680 citations
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