articleTop 10% cited
Measurement of Forbidden Energy Gap of Semiconductors by Diffuse Reflectance Technique
physica status solidi (b) · 1970 · Vol. 38(1) · pp. 363–367
S. P. Tandon✉(Jai Narain Vyas University)J.P. Gupta(Jai Narain Vyas University)
Abstract
Abstract Diffuse reflectance technique for the measurement of forbidden energy gap, E g , is discussed. The energy coordinate of the point at which the linear increase in the Kubelka‐Munk function starts gives the E g ‐value. The E g ‐values of fifteen semiconductors are reported. These E g ‐values are found to be in good agreement with those measured by other methods.
Phase-change materials and chalcogenidesTransition Metal Oxide NanomaterialsChemical and Physical Properties of MaterialsSemiconductorReflectivityDiffuse reflectionEnergy (signal processing)Band gapDiffuse reflectance infrared fourier transformOpticsPoint (geometry)Function (biology)Physics
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References
The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids
Physical Review · 1953 · 5,791 citations
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