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A 4-Mb toggle MRAM based on a novel bit and switching method

IEEE Transactions on Magnetics · 2005 · Vol. 41(1) · pp. 132–136

B. N. Engel✉(ON Semiconductor (United States))Johan Åkerman(ON Semiconductor (United States))B. Butcher(ON Semiconductor (United States))R. W. Dave(ON Semiconductor (United States))M. DeHerrera(ON Semiconductor (United States))M. Durlam(ON Semiconductor (United States))G. Grynkewich(ON Semiconductor (United States))J. Janesky(ON Semiconductor (United States))Srinivas V. Pietambaram(ON Semiconductor (United States))N.D. Rizzo(ON Semiconductor (United States))J. M. Slaughter(ON Semiconductor (United States))K. Smith(ON Semiconductor (United States))J. J. Sun(ON Semiconductor (United States))S. Tehrani(ON Semiconductor (United States))

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Abstract

A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-/spl mu/m complementary metal-oxide-semiconductor process with a bit cell size of 1.55 /spl mu/m/sup 2/. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

Magnetic properties of thin films Physics of Superconductivity and Magnetism Magneto-Optical Properties and ApplicationsMagnetoresistive random-access memoryComputer scienceMaterials scienceBit (key)MagnetoresistanceMagnetic storageOptoelectronicsElectrical engineeringRandom access memoryComputer hardware

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