articleTop 1% cited
Electronic states in semiconductor heterostructures
IEEE Journal of Quantum Electronics · 1986 · Vol. 22(9) · pp. 1625–1644
G. Bastard✉(École Normale Supérieure - PSL)J. A. Brum(École Normale Supérieure - PSL)
Abstract
This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Semiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignSemiconductorHeterojunctionOptoelectronicsSemiconductor laser theoryMaterials science
Citations
447
FWCI
14.05
field-weighted impact
References
81
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100%
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Citations per year
References
Band structure of indium antimonide
Journal of Physics and Chemistry of Solids · 1957 · 3,659 citations
Optical characterization of interface disorder in multi-quantum well structures
Solid State Communications · 1981 · 447 citations
Electric field dependence of optical absorption near the band gap of quantum-well structures
Physical review. B, Condensed matter · 1985 · 2,000 citations
Electronic properties of two-dimensional systems
Reviews of Modern Physics · 1982 · 7,357 citations
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