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Electronic states in semiconductor heterostructures

IEEE Journal of Quantum Electronics · 1986 · Vol. 22(9) · pp. 1625–1644
G. BastardJ. A. Brum

Abstract

This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.

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References
Band structure of indium antimonide
Journal of Physics and Chemistry of Solids · 1957 · 3,659 citations
Electric field dependence of optical absorption near the band gap of quantum-well structures
Physical review. B, Condensed matter · 1985 · 2,000 citations
Electronic properties of two-dimensional systems
Reviews of Modern Physics · 1982 · 7,357 citations
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