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Electronic Switching in Phase-Change Memories

IEEE Transactions on Electron Devices · 2004 · Vol. 51(3) · pp. 452–459

A. Pirovano✉(STMicroelectronics (Italy))Andrea L. Lacaita(Politecnico di Milano)A. Benvenuti(STMicroelectronics (Italy))F. Pellizzer(STMicroelectronics (Italy))R. Bez(STMicroelectronics (Italy))

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Abstract

A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge/sub 2/Sb/sub 2/Te/sub 5/ resistor, in good agreement with measurements performed on test devices.

Phase-change materials and chalcogenides Chalcogenide Semiconductor Thin Films Transition Metal Oxide NanomaterialsChalcogenideResistorPhase-change memoryAmorphous solidMaterials scienceAmorphous semiconductorsOptoelectronicsNon-volatile memoryPhase (matter)Chalcogenide glass

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