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High speed quantum-well lasers and carrier transport effects

IEEE Journal of Quantum Electronics · 1992 · Vol. 28(10) · pp. 1990–2008
Radhakrishnan NagarajanMasayuki IshikawaT. FukushimaR.S. GeelsJohn E. Bowers

Abstract

Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Semiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and DevicesPhotonic and Optical DevicesDifferential gainLaserQuantum wellGain compressionModulation (music)PhysicsFrequency modulationSemiconductor laser theoryResonance (particle physics)Quantum
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References
Semiconducting and other major properties of gallium arsenide
Journal of Applied Physics · 1982 · 2,460 citations
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