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Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

IEEE Journal of Quantum Electronics · 1984 · Vol. 20(3) · pp. 265–275
D. S. ChemlaDavid A. B. MillerP. W. SmithA. C. GossardW. Wiegmann

Abstract

We present detailed experimental studies and modeling of the nonlinear absorption and refraction of GaAs/AlGaAs multiple quantum well structures (MQWS) in the small signal regime. Nonlinear absorption and degenerate four-wave mixing in the vicinity of the room temperature exciton resonances are observed and analyzed. Spectra of the real and imaginary parts of the nonlinear cross section as a function of wavelength are obtained, and these are in excellent agreement with experimental data. A simple model for excitonic absorption saturation is proposed; it accounts qualitatively for the very low saturation intensities of room temperature excitons in MQWS.

Semiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaSpectroscopy and Laser ApplicationsExcitonDegenerate energy levelsMaterials scienceSaturation (graph theory)Absorption (acoustics)Absorption cross sectionWavelengthQuantum wellOpticsAbsorption spectroscopy
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References
Semiconducting and other major properties of gallium arsenide
Journal of Applied Physics · 1982 · 2,460 citations
Resonant tunneling in semiconductor double barriers
Applied Physics Letters · 1974 · 1,854 citations
Electronic properties of two-dimensional systems
Reviews of Modern Physics · 1982 · 7,357 citations
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Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures · Scinovex