articleTop 1% cited
Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Nano Letters · 2010 · Vol. 10(4) · pp. 1271–1275
Andrea Splendiani✉(University of California, Berkeley)L. Sun(University of California, Berkeley)Yuanbo Zhang(University of California, Berkeley)Tianshu Li(University of California, Davis)Jonghwan Kim(University of California, Berkeley)Chi Yung Chim(University of California, Berkeley)Giulia Galli(University of California, Davis)Feng Wang(Lawrence Berkeley National Laboratory)
Abstract
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
2D Materials and ApplicationsGraphene research and applicationsNanowire Synthesis and ApplicationsPhotoluminescenceMonolayerMaterials scienceNanomaterialsBand gapSemiconductorNanotechnologyDirect and indirect band gapsQuantum dotNanoscopic scale
Funding
- U.S. Department of Energy
Citations
9,198
FWCI
68.93
field-weighted impact
References
21
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100%
vs. same field & year
Citations per year
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References
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