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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>

Nano Letters · 2010 · Vol. 10(4) · pp. 1271–1275
Andrea SplendianiL. SunYuanbo ZhangTianshu LiJonghwan KimChi Yung ChimGiulia GalliFeng Wang

Abstract

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

2D Materials and ApplicationsGraphene research and applicationsNanowire Synthesis and ApplicationsPhotoluminescenceMonolayerMaterials scienceNanomaterialsBand gapSemiconductorNanotechnologyDirect and indirect band gapsQuantum dotNanoscopic scale

Funding

  • U.S. Department of Energy
Citations
9,198
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References
Electronic Properties of MoS<sub>2</sub> Nanoparticles
The Journal of Physical Chemistry C · 2007 · 711 citations
Two-dimensional atomic crystals
Proceedings of the National Academy of Sciences · 2005 · 11,443 citations
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