articleTop 1% cited
Low threshold, large <i> T <sub>o</sub> </i> injectionlaser emissionfrom (InGa)As quantum dots
Electronics Letters · 1994 · Vol. 30(17) · pp. 1416–1417
N. Kirstaedter✉(Technische Universität Berlin)N. N. Ledentsov(Technische Universität Berlin)Marius Grundmann(Technische Universität Berlin)D. Bimberg(Technische Universität Berlin)V.M. UstinovS. RuvimovM. V. MaximovP. S. Kop’evZh. I. AlfërovUwe Richter(Max Planck Institute of Microstructure Physics)P. Werner(Max Planck Institute of Microstructure Physics)U. Gösele(Max Planck Institute of Microstructure Physics)J. Heydenreich(Max Planck Institute of Microstructure Physics)
Abstract
Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesAdvanced Semiconductor Detectors and MaterialsIngaQuantum dotLaserOptoelectronicsMaterials scienceDiodeQuantum dot laserSemiconductor laser theoryTransformation (genetics)Optics
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805
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References
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
Applied Physics Letters · 1993 · 1,727 citations
Multidimensional quantum well laser and temperature dependence of its threshold current
Applied Physics Letters · 1982 · 3,323 citations
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