article Open AccessTop 1% cited
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
Nature Nanotechnology · 2012 · Vol. 8(2) · pp. 100–103
Thanasis Georgiou✉(University of Manchester)R. Jalil(University of Manchester)Branson D. Belle(University of Manchester)L. Britnell(University of Manchester)Roman Gorbachev(University of Manchester)С. В. Морозов(Institute of Microelectronics Technology and High Purity Materials)Yong-Jin Kim(Seoul National University)A. Gholinia(University of Manchester)Sarah J. Haigh(University of Manchester)O. Makarovsky(University of Nottingham)L. Eaves(University of Nottingham)Л. А. Пономаренко(University of Manchester)A. K. Geǐm(University of Manchester)Kostya S. Novoselov(University of Manchester)Artem Mishchenko(University of Manchester)
Graphene research and applications2D Materials and ApplicationsQuantum and electron transport phenomenaGrapheneQuantum tunnellingHeterojunctionMaterials scienceTransistorOptoelectronicsNanotechnologyThermionic emissionSemiconductorField-effect transistor
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References
Phonons in single-layer and few-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
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From Bulk to Monolayer MoS<sub>2</sub>: Evolution of Raman Scattering
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Electric Field Effect in Atomically Thin Carbon Films
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