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Short-circuit dissipation of static CMOS circuitry and its impact on the design of buffer circuits

IEEE Journal of Solid-State Circuits · 1984 · Vol. 19(4) · pp. 468–473
Harry Veendrick

Abstract

A simple formula is derived for quick calculation of the maximum short-circuit dissipation of static CMOS circuits. A detailed discussion of this short-circuit dissipation is given based on the behavior of the inverter when loaded with different capacitances. It was found that if each inverter of a string is designed in such a way that the input and output rise and fall times are equal, the short-circuit dissipation will be much less than the dynamic dissipation (<20%). This result has been applied to a practical design of a CMOS driving circuit (buffer), which is commonly built up of a string of inverters. An expression has also been derived for a tapering factor between two successive inverters of such a string to minimize parasitic power dissipation. Finally, it is concluded that optimization in terms of power dissipation leads to a better overall performance (in terms of speed, power, and area) than is possible by minimization of the propagation delay.

Low-power high-performance VLSI designQuantum-Dot Cellular AutomataAnalog and Mixed-Signal Circuit DesignDissipationInverterCMOSElectronic circuitElectronic engineeringAdiabatic circuitTaperingPower (physics)Computer scienceString (physics)
Citations
752
FWCI
5.11
field-weighted impact
References
3
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95%
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