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Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

Optics Express · 2007 · Vol. 15(25) · pp. 17106–17106

William M. Green✉(IBM (United States))M. J. Rooks(IBM (United States))L. Šekarić(IBM (United States))Yurii A. Vlasov(IBM (United States))

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Abstract

Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

Photonic and Optical Devices Optical Network Technologies Advanced Photonic Communication SystemsOpticsModulation (music)Electro-optic modulatorFigure of meritDiodeSiliconMaterials scienceOptoelectronicsPhysicsMach–Zehnder interferometer