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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Journal of Crystal Growth · 1998 · Vol. 183(1-2) · pp. 23–30
M. A. Sánchez-Garcı́a✉(Universidad Politécnica de Madrid)E. Calleja(Universidad Politécnica de Madrid)E. Monroy(Universidad Politécnica de Madrid)F.J. Sánchez(Universidad Politécnica de Madrid)F. Calle(Universidad Politécnica de Madrid)E. Muñoz(Universidad Politécnica de Madrid)R. Beresford(Universidad Politécnica de Madrid)
GaN-based semiconductor devices and materialsGa2O3 and related materialsMetal and Thin Film MechanicsMolecular beam epitaxySubstrate (aquarium)PhotoluminescenceMaterials scienceStoichiometryAnalytical Chemistry (journal)DesorptionEpitaxyThin filmExciton
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