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GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Japanese Journal of Applied Physics · 1996 · Vol. 35(2S) · pp. 1273–1273
Masahiko Kondow✉(Hitachi (Japan))K. Uomi(Hitachi (Japan))Atsuko Niwa(Hitachi (Japan))T. Kitatani(Hitachi (Japan))Seiji Watahiki(Hitachi (Japan))Y. Yazawa(Hitachi (Japan))
Abstract
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics ( T 0 ) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesGaN-based semiconductor devices and materialsMaterials scienceOptoelectronicsDiodeLaserWavelengthAtmospheric temperature rangeOpticsPhysics
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