article Open AccessTop 1% cited
Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature
Journal of Crystal Growth · 2002 · Vol. 237-239 · pp. 1358–1362
Saki Sonoda✉(Ulvac (Japan))Saburo Shimizu(Ulvac (Japan))T. Sasaki(Japan Advanced Institute of Science and Technology)Yoshiyuki Yamamoto(Japan Advanced Institute of Science and Technology)Hidenobu Hori(Ulvac (Japan))
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materialsMolecular beam epitaxyWurtzite crystal structureFerromagnetismCurie temperatureCondensed matter physicsSapphireMaterials scienceMagnetizationParamagnetismMagnetic semiconductor
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References
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Journal of Applied Physics · 1994 · 2,696 citations
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Japanese Journal of Applied Physics · 1989 · 1,936 citations
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