article Open AccessTop 1% cited
Selectively oxidised vertical cavity surface emittinglaserswith 50% power conversion efficiency
Electronics Letters · 1995 · Vol. 31(3) · pp. 208–209
K.L. Lear✉(Sandia National Laboratories California)K.D. Choquette(Sandia National Laboratories California)Richard Schneider(Sandia National Laboratories California)S.P. Kilcoyne(Sandia National Laboratories California)K.M. Geib(Sandia National Laboratories California)
Abstract
Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350 µA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2 mA drive current. The device operates in a single mode up to 1.5 mW.
Semiconductor Lasers and Optical DevicesPhotonic and Optical DevicesSemiconductor Quantum Structures and DevicesMaterials scienceOptoelectronicsDiodeEnergy conversion efficiencyLaserSemiconductor laser theoryEpitaxySlope efficiencyPower (physics)Optics
Funding
- U.S. Department of Energy
- Sandia National Laboratories
Citations
354
FWCI
83.02
field-weighted impact
References
16
Percentile
100%
vs. same field & year
Citations per year
Cited by
Recent Advances of VCSEL Photonics
Journal of Lightwave Technology · 2006 · 475 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.