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Extraordinary Mobility in Semiconducting Carbon Nanotubes

Nano Letters · 2003 · Vol. 4(1) · pp. 35–39

T. Dürkop✉(University of Maryland, College Park)Stephanie Getty(University of Maryland, College Park)Enrique Cobas(University of Maryland, College Park)Michael S. Fuhrer(University of Maryland, College Park)

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Abstract

Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to extract the field-effect mobility (79 000 cm2/Vs) and estimate the intrinsic mobility (>100 000 cm2/Vs) at room temperature. These values exceed those for all known semiconductors, which bodes well for application of nanotubes in high-speed transistors, single- and few-electron memories, and chemical/biochemical sensors.

Carbon Nanotubes in Composites Graphene research and applications Mechanical and Optical ResonatorsCarbon nanotubeTransistorElectron mobilityMaterials scienceSemiconductorField-effect transistorOptoelectronicsElectron transport chainNanotechnologyInduced high electron mobility transistor

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