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Fabrication technique for Si single-electron transistoroperating at room temperature
Electronics Letters · 1995 · Vol. 31(2) · pp. 136–137
Yasuo Takahashi✉(NTT (Japan))Masao Nagase(NTT (Japan))H. Namatsu(NTT (Japan))K. Kurihara(NTT (Japan))K. Iwdate(NTT (Japan))Yasuyuki Nakajima(NTT (Japan))S. Horiguchi(NTT (Japan))Katsumi Murase(NTT (Japan))M. Tabe(NTT (Japan))
Abstract
A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to ~2 aF, which enabled conductance oscillation of the SET at room temperature.
Quantum and electron transport phenomenaSurface and Thin Film PhenomenaPhotonic and Optical DevicesTransistorFabricationCapacitanceMaterials scienceOscillation (cell signaling)Quantum tunnellingSubstrate (aquarium)OptoelectronicsConductanceSilicon
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