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Mechanism and observation of Mott transition in VO<sub>2</sub>-based two- and three-terminal devices

New Journal of Physics · 2004 · Vol. 6 · pp. 52–52

Hyun-Tak Kim✉(Electronics and Telecommunications Research Institute)Byung Gyu Chae(Electronics and Telecommunications Research Institute)Doo‐Hyeb Youn(Electronics and Telecommunications Research Institute)Sunglyul Maeng(Electronics and Telecommunications Research Institute)Gyungock Kim(Electronics and Telecommunications Research Institute)Kwang‐Yong Kang(Electronics and Telecommunications Research Institute)Yong‐Sik Lim(Konkuk University)

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Abstract

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018% into the conduction band. As a result, a discontinuous jump of the density of states on the Fermi surface is observed and inhomogeneity inevitably occurs. The gate effect in fabricated transistors is clear evidence that the abrupt MIT is induced by the excitation of holes.

Transition Metal Oxide Nanomaterials Advanced Memory and Neural Computing Gas Sensing Nanomaterials and SensorsPhysicsCondensed matter physicsMott insulatorCoulombMetal–insulator transitionMott transitionRaman spectroscopyElectronHubbard modelJump