articleTop 1% cited
Electronic structure of a single MoS2 monolayer
Solid State Communications · 2012 · Vol. 152(10) · pp. 909–913
Eugene S. Kadantsev✉(University of Ottawa)Paweł Hawrylak(Institute for Microstructural Sciences)
2D Materials and ApplicationsPerovskite Materials and ApplicationsMXene and MAX Phase MaterialsBrillouin zoneCondensed matter physicsMonolayerExcitonElectronic band structureBand gapDirect and indirect band gapsChemistrySemimetalElectronic structure
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References
Valley-dependent optoelectronics from inversion symmetry breaking
Physical Review B · 2008 · 1,119 citations
Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
Physical Review Letters · 2010 · 14,911 citations
Single-layer MoS2 transistors
Nature Nanotechnology · 2011 · 14,596 citations
First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
Physica B Condensed Matter · 2011 · 736 citations
Spin-Orbit Coupling Effects in Zinc Blende Structures
Physical Review · 1955 · 3,601 citations
Accurate and simple analytic representation of the electron-gas correlation energy
Physical review. B, Condensed matter · 1992 · 24,707 citations
An alternative way of linearizing the augmented plane-wave method
Solid State Communications · 2000 · 1,006 citations
Electronic excitations: density-functional versus many-body Green’s-function approaches
Reviews of Modern Physics · 2002 · 4,002 citations
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