Piezoelectricity in iii‐v compounds with a phenomenological analysis of the piezoelectric effect

Abstract

Abstract The piezoelectric stress constants e 14 of InSb, InAs, GaSb, GaAs, and AlSb have been measured at room temperature and found to be 0.071; 0.045; 0.13; 0.16, and 0.068 C/m 2 respectively. If the III‐V compound crystals are expanded in the <III> direction, the A‐faces (metal atoms) become negatively charged, in contrast to II‐VI compounds, in which the equivalent faces become positively charged. Using a model of a layered lattice, we show that three different mechanisms may contribute to the piezoelectric effect. These mechanisms are 1. the internal displacement of the ionic charge, 2. the internal displacement of the electronic charge. 3. the change in ionicity due to strain.