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New method for the extraction of MOSFET parameters
Electronics Letters · 1988 · Vol. 24(9) · pp. 543–545
G. Ghibaudo✉(McCormick (United States))
Abstract
A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage V1, the low field mobility μ0 and the mobility attenuation coefficient θ to be obtained.
Advancements in Semiconductor Devices and Circuit DesignAnalog and Mixed-Signal Circuit DesignIntegrated Circuits and Semiconductor Failure AnalysisTransconductanceMOSFETExtraction (chemistry)Materials scienceThreshold voltageElectronic engineeringAttenuationVoltageOptoelectronicsElectrical engineering
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