articleTop 1% cited
An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers
IEEE Journal of Solid-State Circuits · 2004 · Vol. 39(12) · pp. 2259–2268
Andrea Bevilacqua✉(University of Padua)Ali M. Niknejad(University of California, Berkeley)
Abstract
An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.
Radio Frequency Integrated Circuit DesignMicrowave Engineering and WaveguidesElectromagnetic Compatibility and Noise SuppressionChebyshev filterLow-noise amplifierCMOSNoise figureAmplifierElectrical engineeringNoise (video)PhysicsElectronic engineeringMaterials science
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References
Microwave engineering
Journal of the Franklin Institute · 1963 · 5,769 citations
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