articleTop 10% cited
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Thin Solid Films · 2005 · Vol. 486(1-2) · pp. 38–41
Akihiro Takagi✉(Tokyo Institute of Technology)Kenji Nomura(Tokyo Institute of Technology)Hiromichi Ohta(Nagoya University)Hiroshi Yanagi(Tokyo Institute of Technology)Toshio Kamiya(Tokyo Institute of Technology)Masahiro Hirano(Tokyo Institute of Technology)Hideo Hosono(Tokyo Institute of Technology)
Thin-Film Transistor TechnologiesZnO doping and propertiesElectrical and Thermal Properties of MaterialsAmorphous solidHall effectCondensed matter physicsSemiconductorMaterials scienceEffective mass (spring–mass system)Thermal conductionElectron mobilityPercolation (cognitive psychology)Analytical Chemistry (journal)
Citations
473
FWCI
10.52
field-weighted impact
References
13
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99%
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Citations per year
Cited by
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
Journal of Non-Crystalline Solids · 2006 · 891 citations
References
Anomalous Optical Absorption Limit in InSb
Physical Review · 1954 · 3,889 citations
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