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The incorporation and characterisation of acceptors in epitaxial GaAs

Journal of Physics and Chemistry of Solids · 1975 · Vol. 36(10) · pp. 1041–1053

D.J. Ashen✉(Electronics and Radar Development Establishment)P. J. Dean(Electronics and Radar Development Establishment)D.T.J. Hurle(Electronics and Radar Development Establishment)J.B. Mullin(Electronics and Radar Development Establishment)A. M. White(Electronics and Radar Development Establishment)P.D. Greene

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Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Silicon Nanostructures and PhotoluminescenceAcceptorEpitaxyPhotoluminescenceGalliumLuminescenceDopantGallium arsenideExcited stateExcitonMaterials science

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