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Comments on the Moss Formula

physica status solidi (b) · 1980 · Vol. 100(2) · pp. 715–719
Viney GuptaNuggehalli M. Ravindra

Abstract

Abstract An analysis is given of the well‐known Moss formula connecting the energy gap to the refractive index of semiconductors. Based on Penn's model for the dielectric function of semiconductors and the treatment of Wemple, the refractive index is related to the energy gap. For small gaps, the relation is shown to reduce to the earlier predicted linear form.

Optical Coatings and GratingsSurface and Thin Film PhenomenaSemiconductor materials and interfacesRefractive indexMossSemiconductorDielectricDielectric functionBand gapEnergy (signal processing)Index (typography)Function (biology)Physics
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Cited by
Physics of Amorphous Silicon–Carbon Alloys
physica status solidi (b) · 1987 · 462 citations
Relations between the Refractive Index and Energy Gap of Semiconductors
physica status solidi (b) · 1985 · 630 citations
References
Wave-Number-Dependent Dielectric Function of Semiconductors
Physical Review · 1962 · 2,836 citations
On the Penn Gap in Semiconductors
physica status solidi (b) · 1979 · 516 citations
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