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Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

Optics Express · 2013 · Vol. 21(4) · pp. 4908–4908
Philipp TonndorfRobert SchmidtPhilipp BöttgerXiao ZhangJanna BörnerA. LiebigM. AlbrechtChristian KlocOvidiu D. GordanDietrich R. T. ZahnSteffen Michaelis de VasconcellosRudolf Bratschitsch

Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applicationsTungsten diselenidePhotoluminescenceRaman spectroscopyMaterials scienceMolybdenum disulfideTungsten disulfideSemiconductorMonolayerDiselenideBand gap

MeSH terms

LightLuminescent MeasurementsMaterials TestingScattering, RadiationSpectrum Analysis, RamanTransition Elements
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