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Unusual properties of the fundamental band gap of InN

Applied Physics Letters · 2002 · Vol. 80(21) · pp. 3967–3969

Junqiao Wu✉(University of California, Berkeley)W. Walukiewicz(Lawrence Berkeley National Laboratory)K. M. Yu(Lawrence Berkeley National Laboratory)Joel W. Ager(Lawrence Berkeley National Laboratory)E. E. Häller(University of California, Berkeley)Hai Lu(Cornell University)W. J. Schaff(Cornell University)Yoshiki Saito(Ritsumeikan University)Yasushi Nanishi(Ritsumeikan University)

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Abstract

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Ga2O3 and related materialsPhotoluminescenceWurtzite crystal structureBlueshiftBand gapMaterials scienceSapphireWide-bandgap semiconductorMolecular beam epitaxyOptoelectronicsAbsorption (acoustics)

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