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Single-Electron Pump Based on Charging Effects
Europhysics Letters (EPL) · 1992 · Vol. 17(3) · pp. 249–254
H. Pothier✉(Service de Physique de l'État Condensé)P. Lafarge(Service de Physique de l'État Condensé)C. Urbina(Service de Physique de l'État Condensé)D. Estève(Service de Physique de l'État Condensé)Michel Devoret(Service de Physique de l'État Condensé)
Abstract
We have designed and operated a device consisting of three nanoscale tunnel junctions biased below the Coulomb gap. Phase shifted r.f. voltages of frequency f applied to two gates "pump" one electron per cycle through the device. This is shown experimentally by plateaus in the current-voltage characteristic at I = ± ef, the sign of the current depending on the relative phase of the r.f. voltages and not on the sign of the bias voltage.
Quantum and electron transport phenomenaMolecular Junctions and NanostructuresMechanical and Optical ResonatorsSign (mathematics)VoltagePhysicsCurrent (fluid)Phase (matter)BiasingElectronCoulombCoulomb blockadeMaterials science
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