article

Properties of Microstrip Line on Si-SiO/sub 2/ System

IEEE Transactions on Microwave Theory and Techniques · 1971 · Vol. 19(11) · pp. 869–881

Hiroshi Hasegawa✉(Hokkaido University)Mayumi Furukawa(The University of Tokyo)H. Yanai(The University of Tokyo)

Abstract

A parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment. The experiment has been performed over wide ranges of frequency, substrate resistivity, and strip width. Existence of three types of fundamental modes is concluded and the condition for the appearance of each mode is clarified. In particular, the slow-wave mode is found to propagate within the resistivity-frequency range suited to the monolithic circuit technology, and its propagation mechanism is discussed. Approximate analysis of the fringing effect is also made for the slow-wave mode.

Electromagnetic Compatibility and Noise Suppression Microwave Engineering and Waveguides Copper Interconnects and ReliabilityMicrostripMode (computer interface)Materials scienceSubstrate (aquarium)Electrical resistivity and conductivityPropagation constantStriplineLine (geometry)WaveguideEquivalent circuit

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505

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1.35

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