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Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
Advanced Energy Materials · 2013 · Vol. 4(7)
Abstract
A 12.6% Cu2ZnSnSxSe4–x (CZTSSe) solar cell is presented with detailed device characteristics. Both short-circuit current density (Jsc) and open circuit voltage (Voc) increase in the 12.6% champion, relative to previous devices, due to better bulk CZTSSe quality and improved optical architecture. The reduction in Voc deficit shows opportunities to push CZTSSe solar cells to higher efficiency.
Chalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesSemiconductor materials and interfacesMaterials scienceThin film solar cellOptoelectronicsChampionSolar cellCopper indium gallium selenide solar cellsOpen-circuit voltageShort circuitVoltageThin film
Funding
- International Business Machines Corporation
Citations
3,133
FWCI
200.05
field-weighted impact
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20
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100%
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References
Detailed Balance Limit of Efficiency of<i>p-n</i>Junction Solar Cells
Journal of Applied Physics · 1961 · 12,706 citations
Co-evaporated Cu2ZnSnSe4 films and devices
Solar Energy Materials and Solar Cells · 2012 · 601 citations
Beyond 11% Efficiency: Characteristics of State‐of‐the‐Art Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Solar Cells
Advanced Energy Materials · 2012 · 1,009 citations
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