articleTop 1% cited
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
physica status solidi (b) · 2002 · Vol. 230(2) · pp. R4–R6
V. Yu. Davydov✉(Physico-Technical Institute)A. A. Klochikhin(Physico-Technical Institute)V. V. Emtsev(Physico-Technical Institute)S. V. Ivanov(Physico-Technical Institute)V. V. Vekshin(Physico-Technical Institute)F. Bechstedt(Friedrich Schiller University Jena)J. Furthm�ller(Friedrich Schiller University Jena)Hisatomo Harima(Kyoto Institute of Technology)А. В. Мудрый(Institute of Solid State Physics and Semiconductors)Akihiro Hashimoto(University of Fukui)Akio Yamamoto(University of Fukui)J. Aderhold(Leibniz University Hannover)J. Graul(Leibniz University Hannover)E. E. Häller(Lawrence Berkeley National Laboratory)
GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and propertiesSt petersburgTechnical universityLibrary scienceEngineering physicsPhysicsRussian federationSociologyComputer science
Citations
286
FWCI
25.81
field-weighted impact
References
9
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Cited by
Band parameters for nitrogen-containing semiconductors
Journal of Applied Physics · 2003 · 2,720 citations
Band Gap of Hexagonal InN and InGaN Alloys
physica status solidi (b) · 2002 · 306 citations
References
Anomalous Optical Absorption Limit in InSb
Physical Review · 1954 · 3,889 citations
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
physica status solidi (b) · 2002 · 986 citations
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