articleTop 10% cited
MBE grown Ga2O3 and its power device applications
Journal of Crystal Growth · 2013 · Vol. 378 · pp. 591–595
Kohei Sasaki✉(National Institute of Information and Communications Technology)Masataka Higashiwaki(Japan Science and Technology Agency)Akito KuramataTakekazu MasuiShigenobu Yamakoshi
Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis TechniquesOptoelectronicsEpitaxyMolecular beam epitaxySchottky diodeMaterials scienceDiodeBreakdown voltageSchottky barrierDopingTransistor
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References
Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
Japanese Journal of Applied Physics · 2008 · 671 citations
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
Japanese Journal of Applied Physics · 2007 · 554 citations
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